Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping-Reference-Cited by-同舟云学术

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Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

Published:2016-04 Issue: Volume:440 Page:6-12
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Berger Christoph,Lesnik Andreas,Zettler Thomas,Schmidt Gordon,Veit Peter,Dadgar Armin,Bläsing Jürgen,Christen Jürgen,Strittmatter André

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Surface-emitting laser-its birth and generation of new optoelectronics field

2. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

3. Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

4. Principles of Optics;Born,1970

5. Band parameters for nitrogen-containing semiconductors

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2. Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes;Journal of Applied Physics;2022-12-21

3. Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping;Japanese Journal of Applied Physics;2021-12-22

4. Low-resistivity vertical current transport across AlInN/GaN interfaces;Japanese Journal of Applied Physics;2020-12-21

5. The impurity size-effect and phonon deformation potentials in wurtzite GaN;Semiconductor Science and Technology;2020-08-13

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