AlInN optical confinement layers for edge emitting group III-nitride laser structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tłumienie efektu thermal crosstalk w linijkach laserowych;PRZEGLĄD ELEKTROTECHNICZNY;2022-09-05
2. Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs;Materials;2020-03-22
3. GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode;Semiconductor Science and Technology;2020-03-19
4. Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices;physica status solidi (b);2015-09-28
5. Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding;Applied Physics Letters;2011-05-16
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