450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers

Abstract

Abstract We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.18N/25 nm Al0.03Ga0.97N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 μm Al0.03Ga0.97N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained.