Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2338543
Reference18 articles.
1. 250nmAlGaN light-emitting diodes
2. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
3. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
4. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
5. Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultra-Violet Region
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