Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultra-Violet Region-Reference-Cited by-同舟云学术

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Improvement of Crystal Quality of AlGaN Multi Quantum Well Structure by Combination of Flow-Rate Modulation Epitaxy and AlN/GaN Multi-Buffer Layer and Resultant Lasing at Deep Ultra-Violet Region

Published:2004-09-10 Issue:No. 10A Volume:43 Page:L1258-L1260
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takano Takayoshi,Ohtaki Yasuyuki,Narita Yoshinobu,Kawanishi Hideo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=10A/a=L1258/pdf

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of non-polar AlN films by ICP etching and overgrowth by MBE;Journal of Crystal Growth;2024-11

2. Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2024-09-09

3. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays;Light: Science & Applications;2021-04-30

4. Group III-Nitride-Based UV Laser Diodes;Semiconductor Nanophotonics;2020

5. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics;Scientific Reports;2017-09-19

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