Thermally stable Pd/Ge ohmic contacts ton‐type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348866
Reference17 articles.
1. Alloying behavior of Ni/Au‐Ge films on GaAs
2. The role of germanium in evaporated AuGe ohmic contacts to GaAs
3. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
4. Some Aspects of GaAs MESFET Reliability
5. Low‐temperature sintering of Pd/Ge films on GaAs
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1. Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As;Applied Physics Letters;2011-07-04
2. A TEM nanoanalytical investigation of Pd/Ge ohmic contacts for the miniaturization and optimization of n-InGaAs MOSFET devices;Journal of Physics: Conference Series;2010-07-01
3. A TEM Nanoanalytic Investigation of Pd/Ge Ohmic Contacts for the Miniaturization and Optimization of InGaAs nMOSFET Devices.;Microscopy and Microanalysis;2009-07
4. An unusual nonlinearity in current-voltage curves of a bidimensional electron gas at low temperatures;Journal of Applied Physics;2005-12-15
5. Pd/Ge(or Si)/Pd/Ti/Au ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs;Metals and Materials International;2004-07
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