NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study-Reference-Cited by-同舟云学术

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NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Published:2005-05-16 Issue:20 Volume:86 Page:201908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nath R.,Soo C. W.,Boothroyd C. B.,Yeadon M.,Chi D. Z.,Sun H. P.,Chen Y. B.,Pan X. Q.,Foo Y. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1929100

Reference20 articles.

1. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

2. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

3. Thin film atomic layer deposition equipment for semiconductor processing

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Collective spin behavior of NiGe thin films on MgO substrate;Journal of Magnetism and Magnetic Materials;2021-06

2. In Situ Transmission Electron Microscopy;Springer Handbook of Microscopy;2019

3. Growth and evolution of nickel germanide nanostructures on Ge(001);Nanotechnology;2015-09-03

4. Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition;Solid-State Electronics;2015-08

5. Endoepitaxial growth of hexagonal-Fe13Ge8 islands on Cubic-Ge(001);Journal of Physics and Chemistry of Solids;2012-10

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