Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier
Author:
Affiliation:
1. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea
Funder
Ministry of Science, ICT and Future Planning (MSIP)
Ministry of Trade, Industry and Energy (MOTIE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4950966
Reference19 articles.
1. Memristive switching mechanism for metal/oxide/metal nanodevices
2. Resistive switching characteristics of ultra-thin TiOx
3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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