Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
Author:
Affiliation:
1. Department of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Energimyndigheten (Swedish Energy Agency)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936386
Reference28 articles.
1. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
2. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
3. Electroluminescence Characterization of (20\bar21) InGaN/GaN Light Emitting Diodes with Various Wavelengths
4. Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
5. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
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