Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481962
Reference23 articles.
1. Study of the effects of a stepped doping profile in short-channel MOSFETs
2. Room‐temperature electron mobility in strained Si/SiGe heterostructures
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4. Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
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