Study of the effects of a stepped doping profile in short-channel MOSFETs-Reference-Cited by-同舟云学术

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Study of the effects of a stepped doping profile in short-channel MOSFETs

Published:1997 Issue:9 Volume:44 Page:1425-1431
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lopez-Villanueva J.A.,Gamiz F.,Roldan J.B.,Ghailan Y.,Carceller J.E.,Cartujo P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/13531/00622597.pdf?arnumber=622597

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor;International Journal of Electronics;2014-08-12

2. Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs;Journal of Computational and Theoretical Nanoscience;2013-01-01

3. Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications;VLSI Design;2011-05-26

4. An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs;Semiconductor Science and Technology;2010-04-06

5. Monte Carlo simulation of nanoelectronic devices;Journal of Computational Electronics;2009-10

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