Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor
Author:
Affiliation:
1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2014.945194
Reference16 articles.
1. Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels
2. Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield
3. 25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)
4. A physically based mobility model for numerical simulation of nonplanar devices
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