Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102138
Reference13 articles.
1. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
2. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
3. GexSi1−xstrained‐layer heterostructure bipolar transistors
4. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
5. Defects in epitaxial multilayers
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2. Si/Si 1-x Ge x waveguide components for WDM demultiplexing;SPIE Proceedings;1999-03-19
3. Sb-enhanced diffusion in strainedSi1−xGex: Dependence on biaxial compression;Physical Review B;1999-03-15
4. Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres;Physica Scripta;1999
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