Author:
Kuznetsovt A. Yu.,Cardenast J.,Svenssont B. G.,Larsen A. Nylandsted,Hansen J. Lundsgaard
Abstract
ABSTRACTEnhanced Sb diffusion in biaxially compressed Si1-x-Gex layers is observed. Assuming the prefactors to be stress independent the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.2 and Si0 8 Ge0.2 were extracted as 0.4 × 102 exp[− (3.98(eV) ± 0.12)/kT] and 1.3x 102 exp[− (3.85(eV) ±0.12)/kT] cm2 /s, respectively. The activation volume of Sb diffusion in Si1-xGex (x ≤ 0.2) is estimated to be close to ω, where ω is the volume corresponding to a silicon lattice site.
Publisher
Springer Science and Business Media LLC
Reference14 articles.
1. 14. Kuznetsov A.Yu. , Cardenas J. , Grahn J. , Svensson B.G. , Hansen J.Lundsgaard , and Larsen A.Nylandsted , submitted to Phys. Rev. B (980223).
2. Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms
3. 12. For the case of point defect assisted diffusion δV = δVf + δVf and δVm are the formation and migration volumes of the defect mediating the diffusion process. In its turn the values of δVf and δVm should not exceed Q2 for conventional solids (see Ref. 10).
4. Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology