Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119066
Reference16 articles.
1. Boron diffusion in strainedSi1−xGexepitaxial layers
2. Multilayers as Microlabs for Point Defects: Effect of Strain on Diffusion in Semiconductors
3. Diffusion in strained Si(Ge)
4. Comparison of boron diffusion in Si and strained Si1−xGexepitaxial layers
5. Effects of strain on boron diffusion in Si and Si1−xGex
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