Multilayers as Microlabs for Point Defects: Effect of Strain on Diffusion in Semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.448/fulltext
Reference15 articles.
1. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
2. Diffusion and segregation in inhomogeneous media and the Ge_{x}Si_{1-x} heterostructure
3. Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs
4. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
5. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
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