Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2824461
Reference20 articles.
1. Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
2. AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
4. Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy
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1. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
2. Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures*;Chinese Physics B;2021-09-01
3. Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 Ga 0 . 9 N / GaN /Al 0. 04 Ga 0 . 96 N high electron mobility transistors for RF applications;International Journal of RF and Microwave Computer-Aided Engineering;2021-06-08
4. Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT;AIP Advances;2020-02-01
5. Optimization of AlN spacer layer in MOVPE grown AlGaN/AlN/InGaN/GaN high electron mobility heterostructure;AIP Conference Proceedings;2020
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