Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect-Reference-Cited by-同舟云学术

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Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect

Published:1999-07-15 Issue:Part 2, No. 7B Volume:38 Page:L799-L801
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maeda Narihiko,Saitoh Tadashi,Tsubaki Kotaro,Nishida Toshio,Kobayashi Naoki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Few-layer Bi₂O₂Se: a promising candidate for high-performance near-room-temperature thermoelectric applications;Nanotechnology;2024-08-29

2. Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination;Electronics;2023-02-22

3. Electrically Switchable Polarization in Bi₂O₂Se Ferroelectric Semiconductors;Advanced Materials;2023-02-08

4. Analysis of InGaN Back-Barrier on Linearity and RF Performance in a Graded-Channel HEMT;Journal of Electronic Materials;2022-12-08

5. Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer;physica status solidi (RRL) – Rapid Research Letters;2022-01-13

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