Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors

Author:

Wang Weijun1ORCID,Meng You1ORCID,Zhang Yuxuan1,Zhang Zhuomin2,Wang Wei1,Lai Zhengxun1,Xie Pengshan1,Li Dengji1,Chen Dong1,Quan Quan1,Yin Di1,Liu Chuntai3,Yang Zhengbao2,Yip SenPo4,Ho Johnny C.456ORCID

Affiliation:

1. Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China

2. Department of Mechanical Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China

3. Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University) Ministry of Education Zhengzhou 450002 P. R. China

4. Institute for Materials Chemistry and Engineering Kyushu University Fukuoka 816‐8580 Japan

5. State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China

6. Hong Kong Institute for Advanced Study City University of Hong Kong Kowloon Hong Kong SAR 999077 P. R. China

Abstract

AbstractAtomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high‐density integration. Here, a room‐temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2O2Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33) of 4.4 ± 0.1 pm V−1. The random orientations and electrically dependent polarization of the dipoles in Bi2O2Se are separately uncovered owing to the structural symmetry‐breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2O2Se is explored on device‐level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2O2Se, the fabricated device exhibits “smart” photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2O2Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3