AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement-Reference-Cited by-同舟云学术

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AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

Published:2006-01 Issue:1 Volume:27 Page:10-12
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jie Liu ,Yugang Zhou ,Jia Zhu ,Lau K.M.,Chen K.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/33147/01561439.pdf?arnumber=1561439

Cited by 78 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of AlGaN/GaN HEMT Device with InGaN Back Barrier for RF Applications;2023 International Conference on Communication, Circuits, and Systems (IC3S);2023-05-26

2. Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing;Current Applied Physics;2023-05

3. CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

4. Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications;International Journal of RF and Microwave Computer-Aided Engineering;2022-08-15

5. The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer;IEEE Transactions on Electron Devices;2022-08

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