Design of AlGaN/GaN HEMT Device with InGaN Back Barrier for RF Applications-Reference-Cited by-同舟云学术

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Design of AlGaN/GaN HEMT Device with InGaN Back Barrier for RF Applications

Published:2023-05-26 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Communication, Circuits, and Systems (IC3S)
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Author:

Pattnaik Geeta¹,Mohapatra Meryleen¹

Affiliation:

1. ITER, Siksha ‘O’ Anusandhan, Deemed To Be University,Faculty of Engineering and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10169128/10169121/10169194.pdf?arnumber=10169194

Reference13 articles.

1. Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs

2. AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

4. AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

5. Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

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