Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation-Reference-Cited by-同舟云学术

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Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

Published:2018-08 Issue:8 Volume:8 Page:085213
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Guo Hongliang¹^ORCID,Wu Yiyong¹²^ORCID,Xiao Jingdong¹,Guo Bin¹²,Sun Qiang³,Yu Hui³

Affiliation:

1. School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

2. Research Center of Space Basic Science, Harbin Institute of Technology, Harbin 150001, China

3. Tianjin Institute of Power Source, Tianjin 300381, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034147

Reference27 articles.

1. Analytical model for multi-junction solar cells prediction in space environment

2. Analysis for superior radiation resistance of InP-based solar cells

3. Photovoltaic Material Characterization With Steady State and Transient Photoluminescence

4. External quantum efficiency artifacts in partial-irradiated GaInP/GaAs/Ge solar cells by protons and electrons

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transfer mechanisms and geometry effect on the dynamics of excitons in boron-containing GaAs alloys: Time-resolved photoluminescence investigation;Optical Materials;2021-09

2. Effect of 1 MeV electron irradiation on TiO2/Al2O3/MgF2 anti-reflective coating for GaInP/InGaAs/Ge triple junction solar cells;Optical Materials;2020-11

3. Analysis of 1 MeV electron irradiation-induced performance degradation in the germanium bottom cell of triple-junction solar cells using temperature-dependent photoluminescence measurements;Spectroscopy Letters;2019-09-12

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