Analysis of 1 MeV electron irradiation-induced performance degradation in the germanium bottom cell of triple-junction solar cells using temperature-dependent photoluminescence measurements-Reference-Cited by-同舟云学术

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Analysis of 1 MeV electron irradiation-induced performance degradation in the germanium bottom cell of triple-junction solar cells using temperature-dependent photoluminescence measurements

Published:2019-09-12 Issue:8 Volume:52 Page:441-446
ISSN:0038-7010
Container-title:Spectroscopy Letters
language:en
Short-container-title:Spectroscopy Letters

Author:

Liu Jun¹,Wang Junling¹,Liu Yanyu¹,Yan Gang¹,Rui Wu¹,Wang Rong¹²

Affiliation:

1. Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, People’s Republic of China;

2. Beijing Radiation Center, Beijing, People’s Republic of China

Publisher

Informa UK Limited

Subject

Spectroscopy,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

https://www.tandfonline.com/doi/pdf/10.1080/00387010.2019.1660683

Reference21 articles.

1. Proton radiation analysis of multi-junction space solar cells

2. Detailed Characterization of the Radiation Response of Multijunction Solar Cells Using Electroluminescence Measurements

3. Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

4. The Influence of High Temperatures on Radiation Damage of GaInP $_{\bf 2}$/GaAs/Ge Triple Junction Cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties and defect levels induced by n/p-type defect-complexes in Ge;Materials Science in Semiconductor Processing;2022-11

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