External quantum efficiency artifacts in partial-irradiated GaInP/GaAs/Ge solar cells by protons and electrons-Reference-Cited by-同舟云学术

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External quantum efficiency artifacts in partial-irradiated GaInP/GaAs/Ge solar cells by protons and electrons

Published:2018-05-29 Issue:3 Volume:6 Page:144-153
ISSN:2050-0505
Container-title:Energy Science & Engineering
language:en
Short-container-title:Energy Sci Eng

Author:

Hongliang Guo¹^ORCID,Yiyong Wu¹²,Jie Wang¹,Bin Guo¹²,Jingdong Xiao¹,Qiang Sun³,Hui Yu³

Affiliation:

1. School of Materials Science and Engineering; Harbin Institute of Technology; Harbin 150001 China

2. Research Center of Basic Space Science; Harbin Institute of Technology; Harbin 150001 China

3. The 18th Research Institute of China Electronics Technology Group Corporation; Tianjin 300381 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Energy,Safety, Risk, Reliability and Quality

Reference17 articles.

1. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement;Lim;Prog. Photovolt. Res. Appl.,2013

2. Sugai , M. J. Harada M. Imaizumi T. Nakamura T. Ohshima 2014 The study of dependency of external quantum efficiency of triple-junction solar cells on measurement condition

3. Lyu , Z. M. Yuan J. Jia T. Bilir Y. Liu Y. Huo 2016 A novel measurement method of luminescence coupling in multijunction solar cells based on small signal method

4. Combined effects of shunt and luminescence coupling on external quantum efficiency measurements of multijunction solar cells;Li;IEEE J. Photovolt.,2011

5. Proton and electron radiation data and analysis of GaInP2/GaAs/Ge solar cells;Sharps;Prog. Photovolt. Res. Appl.,2002

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4. Vacuum-deposited organic photodetectors utilizing non-fullerene acceptors for enhanced detectivity in the green visible light spectrum;Journal of Materials Chemistry C;2023

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