Measuring the device‐level EQE of multi‐junction photonic power converters

Author:

Schachtner Michael1,Beattie Meghan N.12ORCID,Reichmuth S. Kasimir13ORCID,Wekkeli Alexander1,Siefer Gerald1,Helmers Henning1ORCID

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE Freiburg Germany

2. SUNLAB, School of Electrical Engineering and Computer Science University of Ottawa Ottawa Ontario Canada

3. Laboratory for Photovoltaic Energy Conversion, Department of Sustainable Systems Engineering (INATECH) University of Freiburg Freiburg Germany

Abstract

AbstractMulti‐junction photonic power converters (PPCs) are photovoltaic cells used in photonic power transmission systems that convert monochromatic light to electricity at enhanced output voltages. The junctions of a multi‐junction PPC have overlapping spectral responsivity, which poses a unique challenge for spectrally resolved external quantum efficiency (EQE) measurements. In this work, we present a novel EQE measurement technique based on a wavelength‐tunable laser system and characterize the differential multi‐junction device‐level EQE (dEQEMJ) as a function of the monochromatic irradiance over seven orders of magnitude. The irradiance‐dependent measurements reveal three distinct irradiance regimes with different dEQEMJ. For the experimentally studied 2‐junction GaAs‐based device, at medium irradiance with photocurrent densities between 0.3 and 90 mA/cm2, dEQEMJ is independent of irradiance and follows the expected EQE of the current‐limiting subcell across all wavelengths. At higher irradiance, nonlinear device response is observed and attributed to luminescent coupling between the subcells. At lower irradiances, namely, in the range of conventional EQE measurement systems, nonlinear effects appear, which mimic luminescent coupling behavior but are instead attributed to finite shunt resistance artifacts that artificially inflate dEQEMJ. The results demonstrate the importance of measuring the device‐level dEQEMJ in the relevant irradiance regime. We propose that device‐level measurements in the finite shunt artifact regime at low monochromatic irradiance should be avoided.

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Wiley

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