Transfer mechanisms and geometry effect on the dynamics of excitons in boron-containing GaAs alloys: Time-resolved photoluminescence investigation-Reference-Cited by-同舟云学术

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Transfer mechanisms and geometry effect on the dynamics of excitons in boron-containing GaAs alloys: Time-resolved photoluminescence investigation

Published:2021-09 Issue: Volume:119 Page:111386
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Hidouri Tarek,Maaref Hassen,Samajdar D.P.,Ben Rabeh Mohamed,Nasr Samia^ORCID,Saidi Fatiha,Ameur Nawal,Saidi Faouzi,Dhahri Jamila,Mghaieth Ridha

Funder

Deanship of Scientific Research, King Faisal University

King Khalid University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference35 articles.

1. Nanowire electronic and optoelectronic devices

2. Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys

3. Carrier confinement effects of In Ga1-N/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

4. Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect

5. LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well

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