Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC-Reference-Cited by-同舟云学术

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Published:2012-10-15 Issue:8 Volume:112 Page:083711
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tien Son Nguyen,Thang Trinh Xuan,Gällström Andreas,Leone Stefano,Kordina Olof,Janzén Erik,Szász Krisztián,Ivády Viktor,Gali Adam

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759362

Reference43 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. EPR identification of intrinsic defects in SiC

3. E. Janzén, A. Gali, A. Henry, I. G. Ivanov, B. Magnusson, and N. T. Son, Defects in Microelectronic Materials and Devices, edited by D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf (CRC, Boca Raton, 2008), pp. 615–669.

4. Divacancy in 4H-SiC

5. Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

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