Identification of the Carbon Antisite-Vacancy Pair in4H-SiC-Reference-Cited by-同舟云学术

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Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

Published:2006-04-10 Issue:14 Volume:96 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Umeda T.,Son N. T.,Isoya J.,Janzén E.,Ohshima T.,Morishita N.,Itoh H.,Gali A.,Bockstedte M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.96.145501/fulltext

Reference23 articles.

1. Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator ofEL2?

2. Metastable defect complexes in GaAs

3. Theory of Self-Diffusion in GaAs*

4. Defect identification in theAsGafamily in GaAs

5. Atomic origin of deep levels in p-type GaN: Theory

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4. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO₂ interface after wet oxidation;Japanese Journal of Applied Physics;2022-03-25

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