Abstract
Abstract
Optically addressable point defects in semiconductor materials have been identified as promising single-photon sources and spin qubits in quantum information technologies. The traditional method of exploring the optical and spin properties of these defects is using a laser with a wavelength shorter than the point defects’ zero-phonon-line (ZPL) to Stokes exciting and detecting the Stokes photoluminescence (PL). On the other hand, anti-Stokes excitation with the pumping laser’s wavelength longer than the defects’ ZPL can also be used to investigate their optical and spin properties. The anti-Stokes excitation has shown many advantages and attracted great interest. Here, we provide a brief review of the anti-Stokes excitation of optically active point defects in semiconductor materials. The Stokes and anti-Stokes PL spectra of different point defect systems in semiconductor materials are compared. We then discuss the main mechanisms of the anti-Stokes excitation of different physical systems and conclude that the anti-Stokes excitation of the point defect system in the semiconductor is a single-photon absorption phonon-assisted process. Finally, we summarize some practical applications of anti-Stokes excitation, including laser cooling of semiconductor materials, high-sensitivity quantum thermometry, and enhancement of the readout signal contrast of the point defect spin states. The anti-Stokes excitation of point defects in semiconductors extends the boundary of quantum technologies.
Funder
National Postdoctoral Program for Innovative Talents
National Natural Science Foundation of China
Anhui Initiative in Quantum Information Technologies
Innovation Program for Quantum Science and Technology
Fundamental Research Funds for The Central Universities
Cited by
4 articles.
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