Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2042540
Reference14 articles.
1. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
2. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
3. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
4. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
5. Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
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