Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Published:2003-12-22 Issue:25 Volume:83 Page:5196-5198
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Helman A.,Tchernycheva M.,Lusson A.,Warde E.,Julien F. H.,Moumanis Kh.,Fishman G.,Monroy E.,Daudin B.,Le Si Dang D.,Bellet-Amalric E.,Jalabert D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1635985

Reference14 articles.

1. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

2. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells

3. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm

4. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy

5. Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

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