Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117764
Reference19 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy;X-Ray, Optical, and Infrared Detectors for Astronomy X;2022-08-29
2. Si epitaxy on Cl-Si(100);Applied Surface Science;2022-07
3. B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100);ACS Applied Materials & Interfaces;2021-08-18
4. SiGe nanostructures: new insights into growth processes;Journal of Physics: Condensed Matter;2002-08-22
5. Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy;Materials Science and Engineering: B;2002-02
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