Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference56 articles.
1. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
2. Epitaxial Si-based tunnel diodes
3. “p-on-n” Si interband tunnel diode grown by molecular beam epitaxy
4. Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy
5. Parametric Investigation ofSi1-xGex/SiMultiple Quantum Well Growth
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy;New Journal of Physics;2017-11-15
2. Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy;Journal of Applied Physics;2012-07
3. Formation of pyramid-like nanostructures in MBE-grown Si films on Si(001);Applied Physics A;2010-08-05
4. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces;Surface Science;2006-09
5. Scanning probe microscopy for silicon device fabrication;Molecular Simulation;2005-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3