Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Published:1999-08-30 Issue:9 Volume:75 Page:1308-1310
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Thompson Phillip E.,Hobart Karl D.,Twigg Mark E.,Jernigan Glenn G.,Dillon Thomas E.,Rommel Sean L.,Berger Paul R.,Simons David S.,Chi Peter H.,Lake Roger,Seabaugh Alan C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124677

Reference19 articles.

1. Future applications of heterostructures

2. Silicon germanium heterostructures in electronics: the present and the future

3. New Phenomenon in Narrow Germaniump−nJunctions

4. Resonant tunneling in Si/Si1−xGexdouble‐barrier structures

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition;IEEE Transactions on Electron Devices;2012-03

2. Negative Differential Resistance Devices and Circuits;Comprehensive Semiconductor Science and Technology;2011

3. Resonant-Interband-Tunneling Diode;Complete Guide to Semiconductor Devices;2010-11-03

4. Si Esaki diodes with high peak to valley current ratios;Applied Physics Letters;2009-12-14

5. Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers;IEEE Electron Device Letters;2008-06

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