Fine structure of the alloy‐broadened thermal emission spectra fromDXcenters in GaAlAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99611
Reference10 articles.
1. Deep level transient spectroscopy signature analysis ofDXcenters in AlGaAs and GaAsP
2. Novel method to determine capture cross‐section activation energies by deep‐level transient spectroscopy techniques
3. Origin of the nonexponential thermal emission kinetics ofDXcenters in GaAlAs
4. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
5. Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As
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1. Determination of donor and DX center capture characteristics by pulsed photoluminescence;Journal of Applied Physics;2018-03-07
2. Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN;Physical Review B;2014-09-25
3. Evidence of threeDXcenters in Al0.28Ga0.72As:Si from Hall experiments;Journal of Applied Physics;2003-06-15
4. Deep levels in strongly Si-compensated GaAs and AlGaAs;Journal of Applied Physics;2002-04-15
5. Evidence for two Si-related DX like centers in AlxGa1−xAs and GaAs;Solid State Communications;1998-04
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