Janus two-dimensional transition metal dichalcogenides

Author:

Zhang Lei1ORCID,Xia Yong1ORCID,Li Xudong1ORCID,Li Luying2ORCID,Fu Xiao3ORCID,Cheng Jiaji1ORCID,Pan Ruikun1ORCID

Affiliation:

1. Ministry-of-Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, School of Materials Science and Engineering, Hubei University, Wuhan 430062, People's Republic of China

2. Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China

3. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

Abstract

Structural symmetry plays a crucial role in the electronic band structure and properties of two-dimensional materials. In contrast to graphene, monolayer transition metal dichalcogenides exhibit intrinsic in-plane asymmetry with suitable direct bandgaps and distinctive optical properties. Efforts have been devoted to breaking their out-of-plane mirror symmetry by applying external electric fields, vertical stacking, or functionalization. The successful fabrication of Janus transition metal dichalcogenides offers a synthetic strategy to breaking the vertical mirror symmetry, leading to a variety of novel properties, such as vertical piezoelectricity, Rashba spin splitting, and excellent exciton properties. Here, we discuss the universal fabrication approaches and unique properties of Janus transition metal dichalcogenides and further present a brief perspective on their potential applications and challenges.

Funder

National Nature Science Foundation of Hubei Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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