Investigation of In segregation in InAs/AlAs quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1427148
Reference14 articles.
1. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
2. Fast, Cheap, and Very Bright
3. Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers
4. Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
5. In surface segregation and growth‐mode transition during InGaAs growth by molecular‐beam epitaxy
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1. Thin Ga(Sb,P)/GaP quantum wells with indirect band gap: Crystal structure, energy spectrum, exciton recombination and spin dynamics;Journal of Luminescence;2024-09
2. Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation;Journal of Vacuum Science & Technology A;2023-06-06
3. Spin dynamics of charged excitons in ultrathin (In,Al)(Sb,As)/AlAs and Al(Sb,As)/AlAs quantum wells with an indirect band gap;Physical Review B;2022-08-09
4. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications;Nanomaterials;2022-04-15
5. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD;Applied Surface Science;2022-01
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