Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123628
Reference11 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Optical spectroscopy of ultrasmall structures etched from quantum wells
3. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
4. Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
5. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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1. Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy;Applied Physics Letters;2021-06-21
2. Quantum Dots: Thermal Effect and Luminescence Properties;Dekker Encyclopedia of Nanoscience and Nanotechnology, Third Edition;2014-06-10
3. Graphene-capped InAs/GaAs quantum dots;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-03
4. Self-Organization and Photoluminescence Properties of Pb1-xSnxTe Nanodots Embedded in a Wide Bandgap CdTe Matrix;Journal of the Society of Materials Science, Japan;2012
5. AlGaAs capping effect on InAs quantum dots self-assembled on GaAs;Physics Letters A;2011-09
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