Mechanism for ion‐induced mixing of GaAs‐AlGaAs interfaces by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99935
Reference12 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices
3. Intermixing of an AlAs‐GaAs superlattice by Zn diffusion
4. Destruction mechanism of III‐V compound quantum well structures due to impurity diffusion
5. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
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1. Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation;MRS Proceedings;1999
2. The time evolution of interdiffusion in multiple quantum wells: a new model of impurity-induced compositional intermixing;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. Modeling Interdiffusion in Superlattice Structures;MRS Proceedings;1997
4. The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation;IEEE Photonics Technology Letters;1996-09
5. Interdiffusion in Quantum Wells: Mixing Mechanisms and Energy Levels;MRS Proceedings;1996
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