Author:
Gass Richard G.,Jackson Howard E.
Abstract
AbstractCompositional interdiffusion in Al0.3 Ga0.7 As/GaAs superlattices induced by Si focused ion beam implantation and subsequent rapid thermal annealing is modeled using a set of diffusion equations which take into account the dynamics of the vacancy spatial profile. The inclusion of a new phenomenological term, which depends on the time derivative of the vacancy concentration spatial profile, provides good agreeement with experiment.
Publisher
Springer Science and Business Media LLC