Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359203
Reference26 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation
3. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
4. Lateral resolution of Si induced disordering of superlattices
5. Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation
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1. Nanostructures by Ion Irradiation;Nanomaterials and Surface Engineering;2013-03-08
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