Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98639
Reference12 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Disorder of an AlAs‐GaAs superlattice by silicon implantation
3. Effects of Be and Si on disordering of the AlAs/GaAs superlattice
4. Refractive index of GaAs-AlAs superlattice grown by MBE
5. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation;Journal of Applied Physics;1995-06
2. Optical channel waveguides in AlGaAs multiple-quantum-well structures formed by focused ion-beam-induced compositional mixing;IEEE Photonics Technology Letters;1993-04
3. Enhanced photoluminescence from AlGaAs/GaAs superlattice gratings fabricated by Si FIB implantation;MRS Proceedings;1992
4. Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing;MRS Proceedings;1992
5. Dose effects in Si FIB-mixing of short period AlGaAs/GaAs superlattices;MRS Proceedings;1991
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