Si doping forn- andp-type conduction in AlxGa1−x As grown on GaAs(311)Aby molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1539912
Reference30 articles.
1. Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
2. Optical and transport properties of piezoelectric [111]-oriented strainedGa1−xInxSb/GaSb quantum wells
3. A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate
4. Self-Organization of Boxlike Microstructures on GaAs (311)B Surfaces by Metalorganic Vapor-Phase Epitaxy
5. Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic buffer;Laser Physics Letters;2018-06-01
2. Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0) substrates with a metamorphic buffer;Laser Physics;2018-05-22
3. Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures;SPIE Proceedings;2015-06-01
4. Band filling effects on temperature performance of intermediate band quantum wire solar cells;Journal of Applied Physics;2014-08-28
5. InGaAs quantum wire intermediate band solar cell;Applied Physics Letters;2012-07-23
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3