InGaAs quantum wire intermediate band solar cell
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737944
Reference28 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. Effect of strain compensation on quantum dot enhanced GaAs solar cells
3. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge
4. Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
5. Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers
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1. InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot;Solar Energy Materials and Solar Cells;2021-06
2. Fundamental Limiting Efficiency and Intrinsic Loss Components of Quantum-Wire Intermediate-Band Solar Cells;Physical Review Applied;2020-12-21
3. Linear and nonlinear susceptibilities in GaN/Al x Ga1−x N quantum wire;Physica Scripta;2020-02-11
4. Light Emitting Devices Based on Quantum Well-Dots;Applied Sciences;2020-02-04
5. Band Variations Caused by Strain Effects for Quantum Wires With Arbitrary Orientations;IEEE Transactions on Electron Devices;2020-01
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