Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0) substrates with a metamorphic buffer-Reference-Cited by-同舟云学术

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Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0) substrates with a metamorphic buffer

Published:2018-05-22 Issue:7 Volume:28 Page:076206
ISSN:1054-660X
Container-title:Laser Physics
language:
Short-container-title:Laser Phys.

Author:

Kuznetsov K A,Galiev G B,Kitaeva G Kh,Kornienko V V,Klimov E A,Klochkov A N,Leontyev A A,Pushkarev S S,Maltsev P P

Publisher

IOP Publishing

Subject

Industrial and Manufacturing Engineering,Condensed Matter Physics,Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1555-6611/28/i=7/a=076206/pdf

Reference30 articles.

1. Terahertz generation by means of optical lasers

2. Review of terahertz photoconductive antenna technology

3. Photoconductive devices for terahertz pulsed spectroscopy: a review [Invited]

4. Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56μm pulse excitation

5. Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

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