Band filling effects on temperature performance of intermediate band quantum wire solar cells
Author:
Affiliation:
1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
2. Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601, USA
Funder
Arkansas Space Grant Consortium (ASGC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893898
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1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
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3. Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
4. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
5. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
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