Two-step excitation induced photovoltaic properties in an InAs quantum dot-in-well intermediate-band solar cell-Reference-Cited by-同舟云学术

Two-step excitation induced photovoltaic properties in an InAs quantum dot-in-well intermediate-band solar cell

Published:2021-02-21 Issue:7 Volume:129 Page:074503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhu Yaxing¹^ORCID,Asahi Shigeo¹^ORCID,Watanabe Kohei¹,Miyashita Naoya²,Okada Yoshitaka²,Kita Takashi¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada Ward, Kobe, Hyogo 657-8501, Japan

2. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan

Funder

Japan Society for the Promotion of Science

Chinese Government Scholarship

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0036313

Reference49 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Fundamental losses in solar cells

3. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells

4. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

5. Quantum well solar cells

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