Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method-Reference-Cited by-同舟云学术

Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

Published:2011-03-15 Issue:6 Volume:109 Page:063528
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kudrawiec R.,Rudziński M.,Gladysiewicz M.,Janicki L.,Hageman P. R.,Strupiński W.,Misiewicz J.,Kucharski R.,Zając M.,Doradziński R.,Dwiliński R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3560537

Reference32 articles.

1. Nonlinear macroscopic polarization in III-V nitride alloys

2. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

3. See, for example, the Proceeding of 8th International Conference on Nitride Semiconductors in Korea published in Phys. Status Solidi 7, (2010).

4. Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

5. Demonstration of AlGaN/GaN High Electron Mobility Transistors ona-Plane (11\bar20) Sapphire

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1. Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE;Materials Science and Engineering: B;2021-01

2. Surface potential barrier inm-plane GaN studied by contactless electroreflectance;Applied Physics Express;2016-01-13

3. Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures: The Issue of Polar Surface Quantum Well;Japanese Journal of Applied Physics;2013-08-01

4. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy;Applied Physics Letters;2013-07-29

5. Surface morphology evolution of m-plane (11¯00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature;Journal of Applied Physics;2013-07-14