Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2801015
Reference16 articles.
1. AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure
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3. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
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