Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height-Reference-Cited by-同舟云学术

Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Published:2018-03-20 Issue:4S Volume:57 Page:04FG13
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imadate Hiroyoshi,Mishima Tomoyoshi,Shiojima Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FG13/pdf

Reference31 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier

4. High performance and high reliability AlGaN/GaN HEMTs

5. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

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